Hynix develops 4-Gigabit DDR3 DRAM based on 30nm process

Hynix recently voiced which it has grown the new 4Gigabit DDR3 DRAM formed upon 30nm fabrication process. This one's targeted towards high-performance servers and claims to increase productivity by 70 percent compared to 40nm routine technology.

This chip additionally saves power. It consumes usually 1.25V, saving some-more than 60% energy compared to 40nm 2Gb chips.

Hynix additionally said which it will begin production of other DRAM inclination formed upon 30nm routine but with the smaller memory capacity during the initial entertain of 2011.

[via CDR Info]

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