Tuesday, December 21, 2010

Samsung sampling 100GB, 200GB, 400GB high-performance MLC-based enterprise-grade SSDs

samsung_64gbssd.jpgSamsung today announced which it has grown as well as proposed sampling 100GB, 200GB as well as 400GB multi-level-cell (MLC) plain state drives (SSDs) for use as a primary storage in craving storage systems. By contracting 30nm MLC NAND flash chips with a Toggle DDR interface as well as a controller which uses a 3Gb/s (gigabits per second) SATA interface, a opening of Samsung's brand brand brand brand new MLC-based SSDs closely approaches or even exceeds a little of a SLC NAND-based SSDs now in a marketplace.

The brand brand brand brand new drives can routine pointless review commands at 43,000 input/outputs per second (IOPS) as well as pointless writes at 11,000 IOPS. This compares to a 15K RPM HDD which has an IOPS rate of 350, amounting to a 120X benefit in pointless IOPS review opening as well as a 30X benefit in pointless IOPS write performance.

In conditions of appetite consumption, a brand brand brand brand new craving SSDs have a 150 times higher IOPS/Watt rate compared to 15K RPM HDDs, making them able to routine 150 times some-more interpretation whilst consuming a same volume of energy.

In addition, a brand brand brand brand new Samsung SSD features an 'end-to-end interpretation protection' duty with modernized interpretation encryption algorithm to assure reliability as well as security for a drive.

Starting next month, Samsung will begin mass producing the brand brand brand brand new MLC-based craving drives.

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