Samsung today voiced the industrys initial production of the 3bit-cell (3bit), 64 gigabit (Gb) NAND peep regulating 20 nanometer process technology. The rarely modernized new thinly slice can be used in high-density peep solutions such as USB peep drives (UFDs) and Secure Digital (SD) mental recall cards.Samsungs 20nm-class, 64Gb 3-bit NAND has the 60 percent aloft capability turn than 30nm-class, 32Gb 3-bit NAND. The device additionally offers softened performance by requesting Toggle DDR (Double Data Rate) 1.0 specifications, compared to those of SDR (Single Data Rate) based 30nm-class NAND chips.
Samsung has repeatedly supposing the market with leading-edge NAND peep solutions, together with the introduction of 30nm-class, 32Gb 3-bit NAND peep last November, pronounced Seijin Kim, vice president, Flash Memory Planning/Enabling, Samsung Electronics. By right away entering in to full production of 20nm-class 64Gb 3-bit devices, we expect to accelerate embracing a cause of the high-performance NAND solutions that use Toggle DDR technology, for applications that additionally need high-density NAND.
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